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BAS32L
High-speed switching diode
Rev. 05 — 3 January 2008
Product data sheet
Product profile
1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in asmall hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.
1.2 Features
■ Small hermetically sealed glass SMD package 1.3 Applications
■ High-speed switching■ Reverse polarity protection 1.4 Quick reference data
Quick reference data
Parameter
Conditions
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
NXP Semiconductors
High-speed switching diode
Pinning information
Description
Simplified outline
The marking band indicates the cathode.
Ordering information
Ordering information
Type number
Description
hermetically sealed glass surface-mounted package; Marking codes
Type number
Marking code
Limiting values
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Parameter
Conditions
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 3 January 2008
NXP Semiconductors
High-speed switching diode
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Parameter
Conditions
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Thermal characteristics
Thermal characteristics
Parameter
Conditions
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Characteristics
Characteristics
Tamb = 25 °C unless otherwise specified.
Parameter
Conditions
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
When switched from IF = 50 mA; tr = 20 ns.
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 3 January 2008
NXP Semiconductors
High-speed switching diode
Forward current as a function of ambient
Forward current as a function of forward
temperature; derating curve
Non-repetitive peak forward current as a
Reverse current as a function of junction
function of pulse duration; maximum values
temperature
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 3 January 2008
NXP Semiconductors
High-speed switching diode
Diode capacitance as a function of reverse voltage; typical values
Test information
Input signal: Reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ ≤ 0.05 Reverse recovery time test circuit and waveforms
Input signal: Forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005 Forward recovery voltage test circuit and waveforms
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 3 January 2008
NXP Semiconductors
High-speed switching diode
Package outline
Package outline SOD80C
10. Packing information
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number
Description
Packing quantity
For further information and the availability of packing methods, see NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 3 January 2008
NXP Semiconductors
High-speed switching diode
11. Soldering
Reflow soldering footprint SOD80C
Fig 10. Wave soldering footprint SOD80C
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 3 January 2008
NXP Semiconductors
High-speed switching diode
12. Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
• The format of this data sheet has been redesigned to comply with the new identity
• Legal texts have been adapted to the new company name where appropriate.
• : amended
• or IR reverse current amended from mA to µA
• • : updated
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 3 January 2008
NXP Semiconductors
High-speed switching diode
13. Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product statusinformation is available on the Internet at URL Definitions
malfunction of an NXP Semiconductors product can reasonably be expectedto result in personal injury, death or severe property or environmentaldamage. NXP Semiconductors accepts no liability for inclusion and/or use of Draft — The document is a draft version only. The content is still under
NXP Semiconductors products in such equipment or applications and internal review and subject to formal approval, which may result in therefore such inclusion and/or use is at the customer’s own risk.
modifications or additions. NXP Semiconductors does not give anyrepresentations or warranties as to the accuracy or completeness of Applications — Applications that are described herein for any of these
information included herein and shall have no liability for the consequences of products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for thespecified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
Limiting values — Stress above one or more limiting values (as defined in
for quick reference only and should not be relied upon to contain detailed and the Absolute Maximum Ratings System of IEC 60134) may cause permanent full information. For detailed and full information see the relevant full data damage to the device. Limiting values are stress ratings only and operation of sheet, which is available on request via the local NXP Semiconductors sales the device at these or any other conditions above those given in the office. In case of any inconsistency or conflict with the short data sheet, the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
Disclaimers
subject to the general terms and conditions of commercial sale, as publishedat , including those pertaining to warranty,intellectual property rights infringement and limitation of liability, unless General — Information in this document is believed to be accurate and
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of reliable. However, NXP Semiconductors does not give any representations or any inconsistency or conflict between information in this document and such warranties, expressed or implied, as to the accuracy or completeness of such terms and conditions, the latter will prevail.
information and shall have no liability for the consequences of use of such No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the Right to make changes — NXP Semiconductors reserves the right to make
grant, conveyance or implication of any license under any copyrights, patents changes to information published in this document, including without or other industrial or intellectual property rights.
limitation specifications and product descriptions, at any time and withoutnotice. This document supersedes and replaces all information supplied priorto the publication hereof.
Trademarks
Suitability for use — NXP Semiconductors products are not designed,
Notice: All referenced brands, product names, service names and trademarks authorized or warranted to be suitable for use in medical, military, aircraft, are the property of their respective owners.
space or life support equipment, nor in applications where failure or 14. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 05 — 3 January 2008
NXP Semiconductors
High-speed switching diode
15. Contents
Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.
NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.comFor sales office addresses, please send an email to: [email protected] Date of release: 3 January 2008
Document identifier: BAS32L_5

Source: http://www.elektroniksc.com.pl/pliki/BA/S3/2L/BAS32L.1.pdf